Semiconductor device

Details Semiconductor device Semiconductor device

2007-01-30

2007-01-30

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S492000, C438S527000

Reexamination Certificate

active

10994358

ABSTRACT:
P-type buried regions104aand104bare formed in an extended drain region102formed in a P-type semiconductor substrate110. An N-type buried region113is formed between the P-type buried regions104aand104b. An N-type impurity concentration of the N-type buried region 113 along a G–G′ plane is low in the vicinity of boundaries between the N-type buried region113and the P-type buried regions104aand104band is increased from the boundaries to an inside of the N-type buried region113.

REFERENCES:
patent: 6010926 (2000-01-01), Rho et al.
patent: 6424007 (2002-07-01), Disney
patent: 2002/0119611 (2002-08-01), Disney
patent: 2002-43562 (2002-02-01), None

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