Semiconductor device

Details Semiconductor device Semiconductor device

2007-07-03

2007-07-03

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including specified plural element logic arrangement

C365S189020, C365S148000

Reexamination Certificate

active

11313833

ABSTRACT:
In a semiconductor device particularly including a phase change material, the reliability of the read-out operation is improved. In a read-out operation of a phase change memory, a bit line to be read out is precharged in advance with a sufficiently low voltage that can prevent the destructive read operation. In this state, after a word line is activated and a period in which the voltage is sufficiently discharged via a storage element which is in a low resistance state elapses (first read out), charge sharing is performed between the bit line and a read bit line of a sense amplifier which is precharged to a high voltage, and a read-out operation is performed again (second read out). Consequently, the read-out signal amount can be increased while suppressing the read current.

REFERENCES:
patent: 6243290 (2001-06-01), Kurata et al.
patent: 6876575 (2005-04-01), Hidaka
patent: 6882557 (2005-04-01), Kajigaya et al.
patent: 7030438 (2006-04-01), Sekiguchi et al.
Woo Yeong Cho et al., “A 0.18μm 3.0V 64Mb Non-Volatile Phase-Transition Random-Access Memory (PRAM),” 2004 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 40-41 (2004).

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