Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-24
2007-04-24
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S374000
Reexamination Certificate
active
10023849
ABSTRACT:
There is provided a semiconductor device including a substrate, a device isolation insulating film formed on the substrate, a gate electrode formed on the substrate, a gate wiring layer formed in the device isolation insulating film and connected to the gate electrode, source and drain electrodes arranged on the substrate to face each other via the gate electrode, and an insulating film covering bottom and side surfaces of each of the gate electrode and the gate wiring layer, wherein the gate, source and drain electrodes and gate wiring layer have upper surface levels equal to or lower than that of the device isolation insulating film.
REFERENCES:
patent: 5482888 (1996-01-01), Hsu et al.
patent: 6001692 (1999-12-01), Gil
patent: 6018185 (2000-01-01), Mitani
patent: 9-312391 (1997-12-01), None
Akasaka Yasushi
Matsuo Kouji
Suguro Kyoichi
Tsunashima Yoshitaka
Yagishita Atsushi
Kabushiki Kaisha Toshiba
Rose Kiesha
Smith Zandra V.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3751470