Semiconductor device

Electronic digital logic circuitry – Interface – Current driving

Reexamination Certificate

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Details

C326S027000

Reexamination Certificate

active

11206045

ABSTRACT:
The semiconductor device according to the present invention comprises an output MOS transistor M0, an MOS transistor M3connected between a gate G1of the output MOS transistor M0and a ground voltage GND, a parasitic transistor Tr1which is formed in parallel with the MOS transistor M3with the substrate terminal of the MOS transistor M3as a base, and a parasitic transistor control circuit for controlling the conducting status of the parasitic transistor Tr1based on the power supply voltage Vcc.

REFERENCES:
patent: 6661260 (2003-12-01), Nakahara et al.
patent: 7170732 (2007-01-01), Andersen et al.
patent: 2003/0169025 (2003-09-01), Finney
patent: 2001-160746 (2001-06-01), None

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