Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2007-04-17
2007-04-17
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S789000, C257S793000, C257S795000, C257SE23169
Reexamination Certificate
active
11378651
ABSTRACT:
A semiconductor device that exhibits an enhanced inhibition to a generation of voids in an underfill resin for encapsulation supplied between a semiconductor chip and an electronic component, which are mutually coupled through bump electrodes. The semiconductor device includes a first semiconductor chip and a second semiconductor chip, wherein bumps-formed surface of the first semiconductor chip is opposed to bumps-formed surface of the electronic component. The semiconductor device includes insulating films that function as protective films respectively formed on an uppermost surface of the first semiconductor chip and on an uppermost surface of the electronic component. Openings for supplying an underfill resin between the first semiconductor chip and the second semiconductor chip are provided in the vicinity of the bumps-formed regions of at least one of the insulating films.
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patent: 6555917 (2003-04-01), Heo
patent: 2005/0214971 (2005-09-01), Hung
patent: 2003-324182 (2003-11-01), None
Clark Jasmine
NEC Electronics Corporation
Young & Thompson
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