Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257S789000, C257S793000, C257S795000, C257SE23169

Reexamination Certificate

active

11378651

ABSTRACT:
A semiconductor device that exhibits an enhanced inhibition to a generation of voids in an underfill resin for encapsulation supplied between a semiconductor chip and an electronic component, which are mutually coupled through bump electrodes. The semiconductor device includes a first semiconductor chip and a second semiconductor chip, wherein bumps-formed surface of the first semiconductor chip is opposed to bumps-formed surface of the electronic component. The semiconductor device includes insulating films that function as protective films respectively formed on an uppermost surface of the first semiconductor chip and on an uppermost surface of the electronic component. Openings for supplying an underfill resin between the first semiconductor chip and the second semiconductor chip are provided in the vicinity of the bumps-formed regions of at least one of the insulating films.

REFERENCES:
patent: 4818728 (1989-04-01), Rai et al.
patent: 5898223 (1999-04-01), Frye et al.
patent: 6016013 (2000-01-01), Baba
patent: 6425516 (2002-07-01), Iwatsu et al.
patent: 6555917 (2003-04-01), Heo
patent: 2005/0214971 (2005-09-01), Hung
patent: 2003-324182 (2003-11-01), None

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