Semiconductor device

Details Semiconductor device Semiconductor device

2007-09-18

2007-09-18

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S347000, C257SE29233, C257SE29270, C438S526000, C438S370000

Reexamination Certificate

active

11212400

ABSTRACT:
A semiconductor substrate includes a first semiconductor layer that is formed on a semiconductor base substrate, a second semiconductor layer that is formed on the first semiconductor layer and that has an etching selection ratio smaller than that of the first semiconductor layer, a cavity portion that is formed below the second semiconductor layer by removing a portion of the first semiconductor layer, a thermal oxidation film that is formed on the surface of the second semiconductor layer in the cavity portion, and a buried insulating film that is buried in the cavity portion.

REFERENCES:
patent: 6727550 (2004-04-01), Tezuka et al.
patent: 6987065 (2006-01-01), Sorada et al.
patent: 2002/0134757 (2002-09-01), Nishizumi et al.
patent: 2004/0235262 (2004-11-01), Lee et al.
patent: 2003-324200 (2003-11-01), None
T. Sakai, et al., “Separation by Bonding Si Islands (SBSI) for LSI Applications”, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, pp. 230-231 (May 2004).
M. Jurczak, et al., “SON (Silicon On Nothing)—A New Device Architecture For The ULSI Era”, 1999 Symposium on VLSI Technology Digest of Technical Papers, pp. 29-30 (1999).

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