Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-05
2006-12-05
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S371000, C257S377000
Reexamination Certificate
active
07145205
ABSTRACT:
A semiconductor device includes: a semiconductor substrate having two types of active regions that are a PMOS region and an NMOS region separated from each other in plan view by a PN separation film; and a dual-gate electrode extending linearly across the PMOS region, the PN separation film and the NMOS region collectively on an upper side of the semiconductor substrate. The dual-gate electrode includes a P-type portion, an N-type portion and a PN junction positioned therebetween. The PN junction includes a silicide region. The silicide region is apart from both the PMOS region and the NMOS region and formed within the area of the PN separation film in plan view.
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Quach T. N.
Renesas Technology Corp.
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