Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2006-12-19
2006-12-19
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S738000, C257S758000, C438S612000, C174S262000, C174S255000, C361S780000, C361S794000
Reexamination Certificate
active
07151319
ABSTRACT:
A BGA semiconductor device for high-speed operation and high pin counts has a base which is constituted by a core layer formed of wiring boards and surface layers provided on both sides of the core layer, and a semiconductor element mounted on the base. Through holes in a signal region of the core layer are disposed in an optimum through hole pattern in which power through holes and ground through holes are disposed adjacent to signal through holes.
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Iida Takashi
Matsunaga Toshihiro
Miyamoto Seiji
Nagata Tatsuya
Antonelli, Terry Stout and Kraus, LLP.
Chu Chris C.
Parker Kenneth
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