Semiconductor device

Details Semiconductor device Semiconductor device

2006-11-07

2006-11-07

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000, C257S341000, C257S409000

Reexamination Certificate

active

07132725

ABSTRACT:
A p-channel MOSFET1has a buried layer9between a substrate2and an epitaxial layer3. The impurity concentration of the buried layer9is higher than that of the epitaxial layer3. As a result, if the p-channel MOSFET3and an n-channel MOSFET are fabricated in a single semiconductor substrate and when a voltage is applied between the source electrode13and the drain electrode12, the impurity concentration of the epitaxial layer3apparently increases. Thus, the charge balance of the p-channel MOSFET1is not lost.

REFERENCES:
patent: 5428241 (1995-06-01), Terashima
patent: 5852314 (1998-12-01), Depetro et al.
patent: 5861657 (1999-01-01), Ranjan

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3685924