Semiconductor device

Details Semiconductor device Semiconductor device

2006-06-20

2006-06-20

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S120000

Reexamination Certificate

active

07064384

ABSTRACT:
A semiconductor device comprises: a first main electrode; a second main electrode; a semiconductor base region of a first conductivity type; a gate electrode provided in a trench through an insulating film, the trench being formed to penetrate the semiconductor base region; and a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type provided under the semiconductor base region. A flow of a current between the first and second main electrodes when a voltage of a predetermined direction is applied between these electrodes is controllable in accordance with a voltage applied to the gate electrode. A depleted region extends from a junction between the first and the second semiconductor regions reaching the trench.

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patent: 2002-26324 (2002-01-01), None
patent: 2002-94061 (2002-03-01), None

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