Semiconductor device

Details Semiconductor device Semiconductor device

2006-08-15

2006-08-15

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S758000, C257S798000, C365S063000, C365S094000

Reexamination Certificate

active

07091518

ABSTRACT:
A first wiring part in a first wiring layer is a starting terminal that is connected to a ground potential. The first wiring part and a second wiring part in a second wiring layer are connected by a first connecting part. The second wiring part and a third wiring part in a third wiring layer are connected by a second connecting part. A fourth wiring part continuously connected with the third wiring part and a fifth wiring part in the second wiring layer are connected by a third connecting part. The fifth wiring part and a sixth wiring part in the first wiring layer are connected by a fourth connecting part. A conducting path that is continuously connected from the starting terminal to an output end is formed by connecting a mound-shaped conducting path thus formed.

REFERENCES:
patent: 5408428 (1995-04-01), Burgess et al.
patent: 5644144 (1997-07-01), Ray
patent: 5723876 (1998-03-01), Ray
patent: 5831280 (1998-11-01), Ray
patent: 6933547 (2005-08-01), Catalasan et al.
patent: 8-181068 (1996-07-01), None

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