Semiconductor device

Details Semiconductor device Semiconductor device

2006-02-14

2006-02-14

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S340000

Reexamination Certificate

active

06998680

ABSTRACT:
A semiconductor device, namely a lateral MOSFET, facilitates to reduce the on-resistance per unit area. The lateral MOSFET exhibiting a high breakdown voltage includes a semiconductor substrate of a first conductivity type, trenches formed in semiconductor substrate and aligned in the channel in the width direction of the MOSFET, a drain drift region of a second conductivity type surrounding the trenches from the side of the side walls and bottom walls thereof, an insulator in each trench, and a region doped with an impurity of the first conductivity type and extending between the trenches.

REFERENCES:
patent: 5701026 (1997-12-01), Fujishima et al.
patent: 6174773 (2001-01-01), Fujishima
patent: 6177704 (2001-01-01), Suzuki et al.
patent: 9-321291 (1997-12-01), None

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