Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-20
2006-06-20
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S357000
Reexamination Certificate
active
07064392
ABSTRACT:
In an N-channel type field effect transistor constituting an input/output protection circuit, an N-type well1awith a lower dopant concentration than the source region3cis formed under the source region3c.
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Foley & Lardner LLP
Nadav Ori
NEC Electronics Corporation
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