Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-09

2006-05-09

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S532000, C257S533000, C257S534000, C257S535000

Reexamination Certificate

active

07042041

ABSTRACT:
There is here disclosed a semiconductor device comprising a capacitor provided on a substrate and formed by sandwiching a capacitive insulating film between lower and upper electrodes, an interlayer insulating film of an n-th layer (n is 1 or greater integer) provided on the substrate to cover the capacitor, and a plurality of plugs and a plurality of wirings provided on the substrate, wherein an electrode wiring among the wirings which is electrically connected to the lower or upper electrode above the capacitor is provided in an interlayer insulating film of an (n+1)-th layer or more formed on the interlayer insulating film of the n-th layer.

REFERENCES:
patent: 6342734 (2002-01-01), Allman et al.
patent: 6459117 (2002-10-01), Liou
patent: 6617666 (2003-09-01), Yoshitomi et al.
patent: 6630705 (2003-10-01), Maeda et al.
patent: 2001-274328 (2001-10-01), None
patent: 2001-274340 (2001-10-01), None
patent: 2002-329790 (2002-11-01), None
U.S. Appl. No. 10/626,592, filed Jul. 25, 2003, Matsunaga et al.
U.S. Appl. No. 10/793,796, filed Mar. 8, 2004, Nakashima.

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