Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-14
2006-11-14
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S317000
Reexamination Certificate
active
07135736
ABSTRACT:
This specification relates to a semiconductor device that comprises a semiconductor substrate11, a source region12and a drain region13, which are formed on the semiconductor substrate11with a channel region14therebetween; a floating gate electrode152that is formed on the channel region14with a gate insulator film151therebetween; a ferroelectric film154that is formed on the floating gate electrode152; and a control gate electrode156that is formed on the ferroelectric film154, wherein intermediate insulator films153and155are formed between at least one of the pairs consisting of the floating gate electrode152and the ferroelectric film154, and the ferroelectric film154and the control gate electrode156, and the intermediate insulator films153and155are made of hafnium oxide that contains nitrogen atoms.
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Mitsue Takahashi et al., “Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory”. The Japan Society of Applied Physics, Jan. 5, 2001, pp. 2923-2927.
Nishikawa Takashi
Ohtsuka Takashi
Rose Kiesha
Smith Zandra V.
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