Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-16

2006-05-16

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000

Reexamination Certificate

active

07045856

ABSTRACT:
In a semiconductor layer of the first conductivity type, a first diffusion region of the second conductivity type is formed which includes a low resistance layer and a high resistance layer. This semiconductor layer of the first conductivity type has its thickness that is less than or equal to the lateral width of the high resistance layer.

REFERENCES:
patent: 5155563 (1992-10-01), Davies et al.
patent: 2002/0167047 (2002-11-01), Yasuhara et al.
patent: 2004/0046202 (2004-03-01), Nakayama et al.

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