Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-08-15
2006-08-15
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S276000, C257S625000, C257S707000, C257S712000, C257S713000, C257S717000, C257S719000, C257S720000, C257S796000, C257SE23075, C257SE31131
Reexamination Certificate
active
07091603
ABSTRACT:
In a semiconductor device having semiconductor chips, a lower heat sink which is joined on the principal rear surface side of the semiconductor chips and an upper heat sink which is joined on the principal front surface side of the semiconductor chips, wherein substantially the whole device is encapsulated with a molded resin, the thick-walled portion of a resin lying around a mounted portion is provided with holes which are resin-flow hindering portions for hindering the flow of the resin during the molding thereof, whereby air bubbles are prevented from appearing in the resin within the mounted portion.
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Mamitsu Kuniaki
Nakase Yoshimi
Clark Jasmine
Denso Corporation
Posz Law Group , PLC
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