Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-16

2006-05-16

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S360000, C257S363000

Reexamination Certificate

active

07045863

ABSTRACT:
An electrostatic discharge protected transistor of the present invention includes transistors in an active region composed of a p-type semiconductor substrate and surrounded by element isolation regions. On the active region composed of the p-type semiconductor substrate, an on-source silicide film and an on-drain silicide film are provided. The on-drain silicide film is not provided in a portion located on a boundary of each transistor and divided to correspond to the respective transistors. As a result, regions between respective pairs of the transistors have high resistances, and it is, therefore, possible to prevent a current from flowing between the different transistors and prevent local current concentration. It is thereby possible to allow the electrostatic discharge protected transistor to make most use of an electrostatic destruction protection capability per unit area without increasing an area of the transistor.

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