Semiconductor device

Details Semiconductor device Semiconductor device

2006-06-13

2006-06-13

Ho, Hoai (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C438S284000, C438S286000, C438S454000

Reexamination Certificate

active

07061059

ABSTRACT:
The invention relates to a high-voltage deep depletion transistor, provided in a semiconductor body (1) having a substrate (2) of a first conductivity type, for example the p-type, and a surface layer (3) of the opposite conductivity type, for example the n-type for an n-channel transistor. To prevent formation of inversion layers below the gate, the channel is subdivided into a plurality of sub-channel regions (7a, 7b, 7c, 7c) mutually separated by p-type regions (11a, 11b, 11c, 11d) which serve to remove generated holes. The p-type regions extend across the whole thickness of the channel and are contacted via the substrate. Each sub-channel region may be subdivided further by intermediate p-type regions (13) to improve the removal of holes.

REFERENCES:
patent: 4868620 (1989-09-01), Kohl et al.
patent: 5266509 (1993-11-01), Chen
patent: 5883413 (1999-03-01), Ludikhuize
patent: 5910670 (1999-06-01), Ludikhuize
patent: 5998845 (1999-12-01), Ludikhuize
Patent Abstracts of Japan, vol. 9, No. 295, Nov. 21, 1985.

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