Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S432000, C257S777000, C257S784000

Reexamination Certificate

active

07098517

ABSTRACT:
A semiconductor device has a first substrate and a second substrate. The first substrate has first electrodes on at least one surface. The second substrate has concave portions on a surface, and second electrodes provided on bottom surfaces of the concave portions. The semiconductor device further has metallic members located between the first electrodes of the first substrate and the second electrodes of the second substrate. The metallic members have a height greater than a depth of the concave portions of the second substrate, and electrically and mechanically bond the first electrodes of the first substrate and the second electrodes of the second substrate.

REFERENCES:
patent: 5581123 (1996-12-01), Kozono
patent: 5926694 (1999-07-01), Chigawa et al.
patent: 6307452 (2001-10-01), Sun
patent: 6410415 (2002-06-01), Estes et al.
patent: 6519075 (2003-02-01), Carr et al.
patent: 6690885 (2004-02-01), Aksyuk et al.
patent: 6713844 (2004-03-01), Tatsuta et al.
patent: 2002/0057506 (2002-05-01), Kaneko
patent: 2-101402 (1990-04-01), None
patent: 2001-143595 (2001-05-01), None
patent: 2001-174724 (2001-06-01), None
patent: 2002-156514 (2002-05-01), None

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