Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2006-05-02
2006-05-02
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S189050
Reexamination Certificate
active
07038961
ABSTRACT:
A phase change memory is provided with a write data register, an output data selector, a write address register, an address comparator and a flag register. Write data is not only written into a memory cell but also retained by the write data register until the next write cycle. If a read access occurs to that address before the next write cycle, data is read out from the register without reading the data from the memory cell array. Without elongating the cycle time, it is possible not only to use long time to write data into a memory cell therein but also to make longer the interval between the time when a write operation is done and the time when the subsequent read operation is made from that memory cell. As a result, data can be written reliably.
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Matsuoka Hideyuki
Osada Kenichi
Sakata Takeshi
Takemura Riichiro
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Le Thong Q.
Reed Smith LLP
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