Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-19

2006-09-19

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S162000, C257S343000, C257S370000, C257S507000, C257S510000

Reexamination Certificate

active

07109551

ABSTRACT:
A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and a high operation speed in a semiconductor device provided with a lateral IGBT, and that prevents malfunctions such as latchup when IGBTs or an IGBT and CMOS devices are integrated together. The structure includes an SOI substrate having a supporting substrate, an oxide film and a p−-semiconductor layer. An island-like element-forming region is isolated by a trench isolation region from surroundings. The trench isolation region includes an isolation trench with an insulation film on its inner wall. The device trench is formed in the element-forming region. A gate electrode is formed with a gate insulator film in the device trench. A collector region and an emitter region outside are provided respectively on the bottom and the outside of the device trench.

REFERENCES:
patent: 5572055 (1996-11-01), Sumida
patent: 5796146 (1998-08-01), Ludikhuize
patent: 6316807 (2001-11-01), Fujishima et al.
patent: 6800904 (2004-10-01), Fujishima et al.
patent: 6858500 (2005-02-01), Sugi et al.

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