Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-26
2006-09-26
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S363000, C257S358000, C257SE27033
Reexamination Certificate
active
07112852
ABSTRACT:
The electrostatic protection device provided between an input/output terminal and an internal circuit of a semiconductor device according to the present invention has a first insulated gate field effect transistor (MOS transistor) and a second MOS transistor that are connected mutually in parallel between an input/output wiring connected to the input/output terminal and an electrode wiring of a prescribed potential, where the first MOS transistor and the second MOS transistor are MOS transistors of the same channel type, the second MOS transistor has s higher drive capability than the first MOS transistor, and the electrostatic protection device is formed such that it is started by the first MOS transistor.
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Ajith Amerasekera and Charvaka Duvvury, “The Impact of Technology Scaling on ESD Robustness and Protection Circuit Design”, IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part A, vol. 18, No. 2, Jun. 1995, pp. 314-320.
Landau Matthew C.
McGinn IP Law Group PLLC
NEC Electronics Corporation
Parker Kenneth
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