Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S363000, C257S358000, C257SE27033

Reexamination Certificate

active

07112852

ABSTRACT:
The electrostatic protection device provided between an input/output terminal and an internal circuit of a semiconductor device according to the present invention has a first insulated gate field effect transistor (MOS transistor) and a second MOS transistor that are connected mutually in parallel between an input/output wiring connected to the input/output terminal and an electrode wiring of a prescribed potential, where the first MOS transistor and the second MOS transistor are MOS transistors of the same channel type, the second MOS transistor has s higher drive capability than the first MOS transistor, and the electrostatic protection device is formed such that it is started by the first MOS transistor.

REFERENCES:
patent: 4682404 (1987-07-01), Miller et al.
patent: 5663082 (1997-09-01), Lee
patent: 6072219 (2000-06-01), Ker et al.
patent: 6175139 (2001-01-01), Horiguchi et al.
patent: 6268256 (2001-07-01), Kuo
patent: 6351362 (2002-02-01), Inoue et al.
patent: 6455898 (2002-09-01), Liu et al.
patent: 6495437 (2002-12-01), Yu
patent: 2002/0149059 (2002-10-01), Ker et al.
patent: 63-202056 (1988-08-01), None
Ajith Amerasekera and Charvaka Duvvury, “The Impact of Technology Scaling on ESD Robustness and Protection Circuit Design”, IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part A, vol. 18, No. 2, Jun. 1995, pp. 314-320.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3589438

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.