Semiconductor device

Details Semiconductor device Semiconductor device

2006-01-24

2006-01-24

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S063000, C365S149000

Reexamination Certificate

active

06990005

ABSTRACT:
The present invention relates to a ferroelectric non-volatile memory. The configuration of the memory includes: a plurality of ferroelectric capacitors for memory in which each one end is connected to each of a plurality of first bit lines via switching transistor; first plate lines connected to the other ends of the ferroelectric capacitors for memory; first ferroelectric capacitors for reference in which each one end thereof is connected to a second bit line via first n-channel MOS transistor; a second plate line connected to the other ends of the first ferroelectric capacitors for reference; and a p-channel MOS transistor connected to the second plate line.

REFERENCES:
patent: 5898608 (1999-04-01), Hirano et al.
patent: 6777736 (2004-08-01), Saigoh et al.
patent: 6781862 (2004-08-01), Takahashi et al.
patent: 8-321186 (1996-12-01), None
patent: 9-120700 (1997-05-01), None

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