Semiconductor device

Details Semiconductor device Semiconductor device

2006-03-07

2006-03-07

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S202000, C257S204000, C257S206000, C257S368000, C257S371000

Reexamination Certificate

active

07009246

ABSTRACT:
To reduce the width of isolation between the first and second p channel MIS•FETs driven by different voltages, a first p channel MIS•FET driven by a first supply voltage and a second p channel MIS•FET driven by a second supply voltage higher than the first supply voltage are arranged in the same n well of the same semiconductor substrate, and the second supply voltage is supplied as a common well bias voltage to the n well.

REFERENCES:
patent: 2001/0043085 (2001-11-01), Shimazaki et al.
patent: 2002/0063267 (2002-05-01), Kumagai et al.
patent: 5-120882 (1993-05-01), None
patent: 5-267617 (1993-10-01), None
patent: 11-7776 (1999-01-01), None
patent: 2001-332695 (2001-11-01), None

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