Semiconductor device

Details Semiconductor device Semiconductor device

2006-01-31

2006-01-31

Tran, Michael (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S244000, C257S330000

Reexamination Certificate

active

06992340

ABSTRACT:
A semiconductor device includes spaced-apart first and second element formation regions which are formed in a main surface of a semiconductor substrate, a dielectric film which is formed on the main surface of the semiconductor substrate at a location between the first and second element formation regions, first electrode patterns which are formed above the first and second element formation regions respectively and each of which has an end portion extended to overlie the dielectric film, the first electrode patterns being formed by patterning of a first electrode layer, second electrode patterns formed above the first electrode patterns respectively, and a passivation film which is formed above the first electrode patterns to be positioned adjacent to the second electrode patterns while covering part of the dielectric film which is exposed during patterning of the first electrode layer.

REFERENCES:
patent: 5503882 (1996-04-01), Dawson
patent: 5798554 (1998-08-01), Grimaldi et al.
patent: 5963837 (1999-10-01), Ilg et al.
patent: 6329288 (2001-12-01), Tokushige et al.
U.S. Appl. No. 10/437,060, filed May 14, 2003, Tanaka.
U.S. Appl. No. 10/814,246, filed Apr. 1, 2004, Okuno et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3561486