Semiconductor device

Details Semiconductor device Semiconductor device

2006-03-21

2006-03-21

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S781000, C257S782000, C257S784000, C257S754000

Reexamination Certificate

active

07015588

ABSTRACT:
According to a semiconductor device of the present invention, a layer of an electric insulator is provided on a semiconductor substrate. A connection pad having a part exposed to a layer surface is provided in the layer. A transistor structure opposed to the connection pad across the electric insulator is provided on the semiconductor substrate. The transistor structure comprises a polysilicon gate opposed to the connection pad across the insulator in the thickness direction of the layer, and a diffusion region provided outside of the respective opposed side edges of the polysilicon gate on a plane where the polysilicon gate is formed. As a result, according to the present invention, a power supply noise between I/O is absorbed and there is provided an excellent effect on an EMI and an EMS especially.

REFERENCES:
patent: 5751065 (1998-05-01), Chittipeddi et al.
patent: 6066877 (2000-05-01), Williams et al.
patent: 6133054 (2000-10-01), Henson
patent: 6229221 (2001-05-01), Kloen et al.
patent: 6329259 (2001-12-01), Johansson
patent: 2-97053 (1990-04-01), None
patent: 2001-284537 (2001-10-01), None
Silicon Processing for the VLSI Era, Stanley Wolf et al., vol. 1, p. 175.

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