Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-09

2006-05-09

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S781000, C257S782000, C257S784000, C257S775000

Reexamination Certificate

active

07042102

ABSTRACT:
In a semiconductor device, bonding-wires can be applied parallel to each other to electrodes of high-speed signal lines when mounting a highly densified semiconductor element on a low-cost substrate while reducing a length of the bonding-wires. An impedance-matched substrate having wiring that impedance-matched with circuits of a semiconductor element is mounted on a substrate. A plurality of first metal wires connect between first electrodes of the semiconductor element and electrodes of the substrate. A plurality of second metal wires connect between second electrodes of the semiconductor element and first electrodes of the impedance-matched substrate. A plurality of third metal wires connect between second electrodes of the impedance-matched substrate and electrodes of the substrate. The second metal wires extend parallel to each other, and the third metal wires also extend parallel to each other.

REFERENCES:
patent: 5294897 (1994-03-01), Notani et al.
patent: 5521431 (1996-05-01), Tahara
patent: 6049126 (2000-04-01), Saitoh
patent: RE37081 (2001-03-01), Eriksen
patent: 6-6151 (1994-01-01), None
patent: 10-178321 (1998-06-01), None
patent: 10-242190 (1998-09-01), None

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