Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-05-30
2006-05-30
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S200000
Reexamination Certificate
active
07054214
ABSTRACT:
A dummy cell includes a plurality of first memory cells MC for storing “1” or “0”, arranged at points of intersection between a plurality of word lines WR0to WR7and a plurality of first data lines D0to D7, a plurality of first dummy cells MCH for storing “1” or “0”, arranged at points of intersection between the word lines WR0to WR7and a first dummy data line, and a plurality of second dummy cells MCL for storing “0”, arranged at points of intersection between the word lines WR0to WR7and a second dummy data line DD1.
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Hanzawa Satoru
Sakata Takeshi
Hitachi , Ltd.
Le Thong Q.
Mattingly, Stanger,Malur & Brundidge, P.C.
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