Semiconductor device

Details Semiconductor device Semiconductor device

2005-12-20

2005-12-20

Picardat, Kevin M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S094000, C257S103000

Reexamination Certificate

active

06977395

ABSTRACT:
A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type. A first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, with the second electrode surrounding the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed inside of the outline of the first electrode. According to such structure, it is possible to realize a device having high luminous efficiency in use and high reliability.

REFERENCES:
patent: 5650337 (1997-07-01), Cahen et al.
patent: 5668048 (1997-09-01), Kondo et al.
patent: 6610606 (2003-08-01), Sakai et al.
patent: 6727518 (2004-04-01), Uemura et al.
patent: 05-335622 (1993-12-01), None
patent: 11-186599 (1999-07-01), None
patent: 11-220171 (1999-08-01), None

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