Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000
Reexamination Certificate
active
06853026
ABSTRACT:
A semiconductor device in which an electrode is not allowed to easily deform even when a heat treatment is performed on a material forming the electrode during a damascene process for forming a stacked capacitor, and a manufacturing method thereof are provided. A conductive film5made of the same material as that of a capacitor lower electrode6is formed so as to be adhered to a top face of a conductive film4by a heat treatment. If the lower electrode6is made of a noble metal such as ruthenium, for example, the conductive film5is made of the same noble metal. Because of use of the same material for forming the conductive film5and the lower electrode6, connection between the conductive film5and the lower electrode6is strengthened. Accordingly, it is easy to maintain connection between the conductive film5and the lower electrode6during a heat treatment on the lower electrode6, so that the lower electrode is not likely to deform. For this reason, connection between the conductive plug4and the lower electrode6can be made more reliable than a structure in which the lower electrode6is connected directly to the conductive plug4.
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H. Itoh, et al., Symposium on VLSI Technology Digest of Technical Papers, pp. 106-107, “a New Cell Technology for the Scalable BST Capacitor Using Damascene-Formed Pedestal Electrode with a [Pt-Ir] Alloy Coating”, 2000.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Rose Kiesha
Zarabian Amir
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