Semiconductor device

Details Semiconductor device Semiconductor device

2005-11-15

2005-11-15

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257S355000, C257S368000, C257S401000, C257S577000

Reexamination Certificate

active

06965150

ABSTRACT:
A plurality of transistor cells (T) are arranged in the semiconductor layer (4). Ring-shaped p-type layers (1b) and n-type layers (1a) composed of polysilicon film are formed alternately on an insulating layer (6) in an outer side than the plurality of transistor cells (T) (the peripheral portion of chip), thereby forming a protective diode (1). The most outer layer of the protective diode (1) is contacted to the gate wiring (2) composed of metal film such as Al, which is formed circularly on the most external layer, and the most inner layer is contacted to the source wiring composed of metal layer, thereby the protective diode is connected between the gate and source of a transistor. As a result of this, the semiconductor device with the protective diode which has the small series resistance, can be formed without enlarging chip area and by using unoccupied space of chip, and realize protection function sufficiently, can be obtained.

REFERENCES:
patent: 4963970 (1990-10-01), Throngnumchai et al.
patent: 5886381 (1999-03-01), Frisina
patent: 5973359 (1999-10-01), Kobayashi et al.
patent: 6268242 (2001-07-01), Williams et al.
patent: 410144938 (1998-05-01), None

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