Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-06-07
2005-06-07
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S063000, C365S177000, C365S225500, C257S529000
Reexamination Certificate
active
06903966
ABSTRACT:
Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.
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Hanzawa Satoru
Ito Kenchi
Matsuoka Hideyuki
Sakata Takeshi
Watanabe Katsuro
A. Marquez, Esq. Juan Carlos
Elms Richard
Fisher Esq. Stanley P.
Hitachi , Ltd.
Le Toan
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