Semiconductor device

Details Semiconductor device Semiconductor device

2005-12-13

2005-12-13

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

C257S499000, C257S392000, C257S393000, C257S394000

Reexamination Certificate

active

06975018

ABSTRACT:
In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is generated by a mixed gas of a second inert gas and one or more gaseous molecules, and a silicon compound layer containing at least a part of the elements constituting the gaseous molecules is formed on the surface of the silicon gas.

REFERENCES:
patent: 5576229 (1996-11-01), Murata et al.
patent: 6017784 (2000-01-01), Ohta et al.
patent: 06-120152 (1994-04-01), None
patent: 08-213404 (1996-08-01), None
Kassabov J et al., “Plasma Processing Effects on 02-HC1 Grown Sl-Si02 Structures”, Solid-State Electronics UK. vol. 32. No. 7, Jul. 1982, pp. 535-540.
Suyama S et al., “Low-Temperature Formation of Gate-S102 Films for Poly-SI TFTS by 02-AR Sputtering”, Electronics & Communications in Japan, Part II—Electronics, Scripta Technica, New York, US, vol. 76, No. 9, Sep. 1993, pp. 91-98.

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