Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S071000, C257S298000, C257S301000, C257S311000, C257S905000, C257S908000
Reexamination Certificate
active
06974987
ABSTRACT:
A memory cell transistor and a trench capacitor are provided in a memory region, and both transistors of CMOS are provided in a logic circuit region. There are provided a bit line contact31and a bit line32extending on an inter-level dielectric30. In a memory cell transistor, a source diffusion layer18is covered with two dielectric sidewalls25aand25bin the memory cell transistor so that no silicide layer is formed on the source diffusion layer18. A plate contact31is provided to pass through the inter-level dielectric30and connect a shield line33to a plate electrode16b. The shield line33is arranged in the same interconnect layer as the bit line32.
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Eriguchi Koji
Itonaga Kazuichiro
Miyanaga Isao
Mori Yoshihiro
Ogawa Hisashi
Huynh Andy
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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