Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-20
2005-12-20
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S340000, C257S341000
Reexamination Certificate
active
06977414
ABSTRACT:
A semiconductor device comprises: a semiconductor layer of a first conductivity type; a pair of base regions of a second conductivity type selectively provided on a surface of the semiconductor layer; and source regions of a first conductivity type, each of the source regions being selectively provided on a surface of each of the base regions. The semiconductor device further comprises an electrical field reducing region of a second conductivity type selectively provided on the surface of the semiconductor layer between the pair of the base regions; a gate insulating film provided on the surface of the base regions; a pair of gate electrodes provided on the gate insulating film, each of the gate electrodes being provided on the surface of the base regions between the source region and the electrical field reducing region; and a source electrode connected to the source regions. The electrical field reducing region is isolated from both of the gate electrode and the source electrode.
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Kawaguchi Yusuke
Nakagawa Akio
Nakamura Kazutoshi
Ono Syotaro
Yamaguchi Yoshihiro
Chaudhari Chandra
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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