Semiconductor device

Details Semiconductor device Semiconductor device

2005-12-13

2005-12-13

Tan, Vibol (Department: 2819)

Electronic digital logic circuitry

Interface

Current driving

C326S083000, C326S081000, C327S390000, C345S098000, C345S100000, C345S204000, C257S072000, C257S350000

Reexamination Certificate

active

06975142

ABSTRACT:
There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node a into a floating state. When the node α is in the floating state, a potential of the node a is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.

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