Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S374000, C257S375000, C257S913000

Reexamination Certificate

active

06946711

ABSTRACT:
In a semiconductor device such as MOSFET, a single crystal semiconductor substrate is provided. An epitaxitial layer is formed on the single crystal semiconductor substrate. A p-well regions are formed on the epitaxitial layer, respectively, and n+source regions are formed on the p-well regions, respectively. A gate electrode is formed through a gate insulation film on a part of each p-well region and that of each n+source region. The gate electrode is covered with an insulation film. On the insulation film, a source electrode is formed so that the n-channel MOSFET includes body diodes BD imbedded therein. A drain electrode is formed on the single crystal semiconductor substrate. A cluster-containing layer is implanted in the single crystal semiconductor substrate as a gettering layer so that the cluster-containing layer contains a cluster of nitrogen.

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