Semiconductor device

Details Semiconductor device Semiconductor device

2005-01-18

2005-01-18

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S339000

Reexamination Certificate

active

06844593

ABSTRACT:
A withstand voltage against electrostatic discharge of a high voltage MOS transistor is improved. An N−-type drain layer is not formed under an N+-type drain layer, while a P+-type buried layer is formed in a region under the N+-type drain layer. A PN junction of high impurity concentration is formed between the N+-type drain layer and the P+-type buried layer. In other words, a region having low junction breakdown voltage is formed locally. The surge current flows through the PN junction into the silicon substrate before the N−-type drain layer below a gate electrode is thermally damaged. Hence, the ESD withstand voltage is improved.

REFERENCES:
patent: 5705842 (1998-01-01), Kitamura et al.
patent: 6534829 (2003-03-01), Sogo et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3437610