Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Reexamination Certificate

active

06841819

ABSTRACT:
There are provided a first insulating film formed over a semiconductor substrate, actual operating capacitors formed on the first insulating film in a memory cell region vertically and horizontally, dummy capacitors formed selectively at four corners of the memory cell region, and a second insulating film formed on the actual operating capacitors and the dummy capacitors.

REFERENCES:
patent: 6229172 (2001-05-01), Kobayashi
patent: 6603161 (2003-08-01), Kanaya et al.
patent: 6642563 (2003-11-01), Kanaya
patent: 9-23009 (1997-01-01), None
patent: 11-345946 (1999-12-01), None

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