Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-24
2005-05-24
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000, C257S325000, C257S326000, C438S261000, C438S263000, C438S264000
Reexamination Certificate
active
06897523
ABSTRACT:
A semiconductor device is provided which includes a diode formed of a MISFET and having a current-voltage characteristic close to that of an ideal diode. Negatively charged particles (e.g. electrons:8a) are trapped on the drain region (2) side of a silicon nitride film (4b) sandwiched between films of silicon oxide (4a,4c). When a bias voltage is applied between the drain and source with the negatively charged particles (8a) thus trapped and in-channel charged particles (9a) induced by them, the MISFET exhibits different threshold values for channel formation depending on whether it is a forward bias or a reverse bias. That is to say, when a reverse bias is applied, the channel forms insufficiently and the source-drain current is less likely to flow, while the channel forms sufficiently and a large source-drain current flows when a forward bias is applied. This offers a current-voltage characteristic close to that of the ideal diode.
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J. De Blauwe, et al. “Si-Dot Non-Volatile Memory Device”, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, Tokyo,2001, pp. 518-519.
Furuta Haruo
Kato Hiroshi
Kuge Shigehiro
Ueno Shuichi
Kang Donghee
Renesas Technology Corp.
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