Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-12
2005-07-12
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S503000
Reexamination Certificate
active
06917075
ABSTRACT:
A semiconductor device and a method of fabricating the same according to this invention are such that: a gate insulator is formed over a predetermined region of a semiconductor substrate; a gate electrode is formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.
REFERENCES:
patent: 5559368 (1996-09-01), Hu et al.
patent: 5814867 (1998-09-01), Saito
patent: 6355492 (2002-03-01), Tanaka et al.
patent: 6534840 (2003-03-01), Esaki
patent: 6753555 (2004-06-01), Takagi et al.
Fariborz Assaderaghi, et al., “A Dynamic Threshold Voltage Mosfet (DTMOS) for Very Low Voltage Operation”, 1994 IEEE, pp. 510-512.
Asai Akira
Hara Yoshihiro
Inoue Akira
Ohnishi Teruhito
Sorada Haruyuki
Dang Phuc T.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3407421