Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-05-03
2005-05-03
Talbott, David L (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C257S774000, C257S471000
Reexamination Certificate
active
06888243
ABSTRACT:
To improve the radiation property without inhibiting miniaturization of the device, heat generated at a heat generating layer (5) is radiated to a substrate (1) via plugs (7, 17), wiring layers (8, 18), and plugs (9, 19). A cross sectional along the principal plane of the substrate (1) of the plugs (7, 9, 17, 19) is set to be a rectangle, and the long sides of the rectangle are parallel to the direction perpendicular to the direction connecting one end and the other end of the heat generating layer (5). Between the plugs (9, 19) and the semiconductor layer (2) is interposed n-type semiconductor layers (3, 13).
REFERENCES:
patent: 4779127 (1988-10-01), Honjo
patent: 5444015 (1995-08-01), Aitken et al.
patent: 5457344 (1995-10-01), Bartelink
patent: 5900668 (1999-05-01), Wollesen
patent: 5937321 (1999-08-01), Beck et al.
patent: 5994777 (1999-11-01), Farrar
patent: 6034433 (2000-03-01), Beatty
patent: 6078106 (2000-06-01), Kawata
patent: 6100589 (2000-08-01), Tanaka
patent: 6124604 (2000-09-01), Koyama et al.
patent: 6130449 (2000-10-01), Matsuoka
patent: 6222270 (2001-04-01), Lee
patent: 6246118 (2001-06-01), Buynoski
patent: 6297563 (2001-10-01), Yamaha
patent: 6307252 (2001-10-01), Knoedl, Jr.
patent: 6337517 (2002-01-01), Ohta et al.
patent: 6404001 (2002-06-01), Koo et al.
patent: 3-248458 (1991-11-01), None
patent: 5-347412 (1993-12-01), None
patent: 10-270704 (1998-10-01), None
patent: 11-135799 (1999-05-01), None
patent: 11-238734 (1999-08-01), None
patent: 11-354807 (1999-12-01), None
Cruz Lourdes
Renesas Technology Corp.
Talbott David L
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3403204