Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-08
2005-03-08
Clark, S. V. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S765000
Reexamination Certificate
active
06864584
ABSTRACT:
In extremely minute copper wiring the width or the thickness of which is equal to or shorter than approximately the double length of the mean free path of a copper atom, a value of the resistance may be larger, compared with aluminum wiring of the same extent and it is difficult to realize wiring having small resistance. To solve such a problem, aluminum wiring is used for wiring having form in which the respective resistivities ρ of both wirings have the relation of ρAl<ρCuand copper wiring is used for wiring having form in which the respective resistivities ρ of both wirings have the relation of ρAl≧ρCu. As a result, a semiconductor device which has small resistance, transmits a signal at high speed and is provided with a multilayer wiring layer can be realized.
REFERENCES:
patent: 6288447 (2001-09-01), Amishiro et al.
patent: 6291885 (2001-09-01), Cabral et al.
patent: 6355555 (2002-03-01), Park
patent: 6569767 (2003-05-01), Fujisawa et al.
patent: 6707156 (2004-03-01), Suzuki et al.
patent: 20020024141 (2002-02-01), Amishiro et al.
patent: 2000-216264 (2000-08-01), None
“Dependence of Electrical Resistivity and Microstructure on Cu Layer Thickness” Central Research Lab., Hitachi, Ltd., Hanaoka et al., p 30.
“Fabrication and Performance Limits of Sub-0.1 μm Cu Interconnects” T.S. Kuan et al., Mat. Res. Soc. Symp. Proc. vol. 612, 2000 Materials Research Society.
Hanaoka Yuko
Hinode Kenji
Kodama Daisuke
Sakuma Noriyuki
Takeda Ken'ichi
Antonelli Terry Stout & Kraus LLP
Clark S. V.
Hitachi , Ltd.
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