Semiconductor device

Details Semiconductor device Semiconductor device

2005-09-13

2005-09-13

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257S328000, C257S409000, C257S410000, C257S489000, C257S490000, C257S491000, C438S138000, C438S139000, C438S140000

Reexamination Certificate

active

06943406

ABSTRACT:
According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type first semiconductor layer formed on the insulating layer and having a first impurity concentration, a first-conductivity-type second semiconductor region formed in the first semiconductor layer from a surface of the first semiconductor layer to a surface of the insulating layer, and having a concentration higher than the first impurity concentration, a second-conductivity-type third semiconductor region formed in the first semiconductor layer from the surface of the first semiconductor layer to the surface of the insulating layer with a predetermined distance between the second and third semiconductor regions, and having a second impurity concentration, a second-conductivity-type fourth semiconductor region formed in a surface portion of the second semiconductor region, and having a concentration higher than the second impurity concentration, an insulating film formed over the surfaces of the first, second, third, and fourth semiconductor layers, and a control electrode formed on the insulating film, wherein a junction of first and second conductivity types formed between the first semiconductor layer and the third semiconductor region is positioned below the control electrode, or below an end portion, on a side of the third semiconductor region, of the control electrode, via the insulating film.

REFERENCES:
patent: 5155569 (1992-10-01), Terashima
patent: 5648671 (1997-07-01), Merchant
patent: 2004/0108544 (2004-06-01), Hossain et al.
patent: 07-086580 (1995-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3393513