Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-01-04
2005-01-04
Cuneo, K. (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S786000, C257S784000, C257S738000, C257S774000, C257S778000, C174S050510
Reexamination Certificate
active
06838767
ABSTRACT:
Provided is a technique which permits production of a semiconductor device having, integrated therein, a semiconductor chip smaller in external size than an ordinary semiconductor chip without lowering the production yield. The semiconductor device according to the present invention comprises a substrate having a square-shaped plane and having an interconnection formed on a first surface (chip mounting surface) of first and second opposite surfaces; a semiconductor chip which is mounted on the first surface of said substrate and has an electrode formed on a first surface (circuit forming surface) of first and second opposite surfaces of the semiconductor chip, and a conductive wire for electrically connecting the electrode of said semiconductor chip with the interconnection of said substrate, said interconnection having a plurality of connecting pads arranged from the peripheral side toward the inner side of said substrate.
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“Electronic Parts and Materials”, Sep. 1998, published by Kogyo Chosakai, pp. 22-52.
Hirano Tsugihiko
Ozawa Hidemi
Cruz Lourdes
Cuneo K.
Hitachi , Ltd.
Hitachi Hokkai Semiconductor Ltd.
Mattingly Stanger & Malur, P.C.
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