Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S342000, C257S339000
Reexamination Certificate
active
06949798
ABSTRACT:
The semiconductor device of the present invention has a repeat structure of repeated unit structures in a semiconductor substrate (1), each unit structure having an n type diffusion region (3) and a p type diffusion region (4) in contact with each other to form a pn junction sandwiched between trenches (1a). An impurity amount in the n type diffusion region (3) and an impurity amount in the p type diffusion region (4) in the unit structure are set unequal (or different). Thus, in the semiconductor device having the trenches (1a), favorable breakdown voltage and avalanche breakdown tolerance can be ensured at the same time.
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Minato Tadaharu
Nitta Tetsuya
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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