1987-10-13
1990-05-15
Wojgiechowicz, Edward J.
357 34, 357 49, 357 55, 357 71, H01L 2348
Patent
active
049262351
ABSTRACT:
A semiconductor device is disclosed, which includes bipolar transistor each having an emitter, base and collector formed inside each protruding portion of a semiconductor substrate, and trenches for device isolation. The bipolar transistor and the trench are spaced apart from each other by a predetermined spacing. According to this arrangement, the width of a base contact becomes uniform and any change of transistor characteristics can be prevented effectively.
REFERENCES:
patent: 4688069 (1987-08-01), Joy et al.
patent: 4812894 (1989-03-01), Nakamura et al.
Hayashida Tetsuya
Ikeda Kiyoji
Kure Tokuo
Nakamura Tohru
Onai Takahiro
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