Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-01-25
2005-01-25
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S019000, C257S198000, C257S564000, C257S588000, C438S235000, C438S309000, C438S312000, C438S317000
Reexamination Certificate
active
06847062
ABSTRACT:
In a semiconductor device functioning as a SiGeC-HBT, an emitter/base stacked portion20is formed on a Si epitaxially grown layer2. The emitter/base stacked portion20includes: a SiGeC spacer layer21; a SiGeC core base layer22containing boron at a high concentration, a SiGe cap layer23; a Si cap layer24, and an emitter layer25formed by introducing phosphorus into the Si cap layer24and the SiGe cap layer23.
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patent: 6570241 (2003-05-01), Hashimoto
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patent: 1 065 728 (2001-01-01), None
patent: P2001-332563 (2001-11-01), None
patent: P2002-158232 (2002-05-01), None
L. D. Lanzerotti et al., “Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation”, IEDM Technical Digest, pp. 249-252, 1996.
D. Knoll et al., “Si/SiGe:C Heterojunction Bipolar Transistors in an Epi-Free Well, Single-Polysilicon Technology”, IEEE, 1998.
Hasegawa Koichi
Ohnishi Teruhito
Saitoh Tohru
Sawada Shigeki
Shimizu Keiichiro
Kang Donghee
Matsushita Electric - Industrial Co., Ltd.
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