Semiconductor device

Details Semiconductor device Semiconductor device

2005-01-25

2005-01-25

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S019000, C257S198000, C257S564000, C257S588000, C438S235000, C438S309000, C438S312000, C438S317000

Reexamination Certificate

active

06847062

ABSTRACT:
In a semiconductor device functioning as a SiGeC-HBT, an emitter/base stacked portion20is formed on a Si epitaxially grown layer2. The emitter/base stacked portion20includes: a SiGeC spacer layer21; a SiGeC core base layer22containing boron at a high concentration, a SiGe cap layer23; a Si cap layer24, and an emitter layer25formed by introducing phosphorus into the Si cap layer24and the SiGe cap layer23.

REFERENCES:
patent: 6570241 (2003-05-01), Hashimoto
patent: 20020163013 (2002-11-01), Toyoda et al.
patent: 1 065 728 (2001-01-01), None
patent: P2001-332563 (2001-11-01), None
patent: P2002-158232 (2002-05-01), None
L. D. Lanzerotti et al., “Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation”, IEDM Technical Digest, pp. 249-252, 1996.
D. Knoll et al., “Si/SiGe:C Heterojunction Bipolar Transistors in an Epi-Free Well, Single-Polysilicon Technology”, IEEE, 1998.

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